GT2100-23 is designed to perform accelerated life testing of Microcircuit
Electronic devices to identify the possibility of early mortalities.
Engineered specifically for applications such as high dissipation forward bias, high-temperature reverse bias, and dynamic and static burn-in of Integrated Chips and other semiconductor devices.
Its application includes an Operation Temperature range of up to 200 ºC and a workspace volume of 23 cu. ft.
The GENTRON BURN-IN OVEN GT2100-23 is designed for applications requiring high dissipation forward bias, high-temperature reverse bias, and both dynamic and static burn-in processes for integrated chips and other semiconductor devices.
GT2100-23
Oven Volume: 23 cu. ft.
Temperature Range: Up to 200 degrees C.
Power Source: 415 VAC, Three Phase, 50 Hz, 20KVA. Control Voltage: 110 VAC, 50 Hz.
Motor full load amperes: 3 H.P./ 5.10 A. Heater: 12 KW / 15 A.
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